Field Emission from Self-Catalyzed GaAs Nanowires

Field Emission from Self-Catalyzed GaAs Nanowires

We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements were taken inside a scanning electron microscope chamber with a nano-controlled tungsten tip functioning as anode. Experimental data were analyzed in the framework of the Fowler-Nordheim theory. We demonstrate stable current up to 10-7 A emitted from the tip of single nanowire, with a...

Te-doping of self-catalyzed GaAs nanowires

Self-healing of fractured GaAs nanowires.

In-situ deformation experiments were carried out in a transmission electron microscope to investigate the structural response of single crystal GaAs nanowires (NWs) under compression. A repeatable self-healing process was discovered in which a partially fractured GaAs NW restored its original single crystal structure immediately after an external compressive force was removed. Possible mechanis...

Raman spectroscopy of self-catalyzed GaAs(1-x)Sb(x) nanowires grown on silicon.

Thanks to their wide band structure tunability, GaAs(1-x)Sb(x) nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their optical and electronic properties. Raman scattering provides information on the vibrational properties of materials, which can be related...

Correction to Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.

Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga drop...